MDB10SS ? 1 a, microdip, si ngle-phase bridge rectifiers ? 2012 fairchild semiconductor corporation www.fairchildsemi.com MDB10SS rev. 1.1.0 1 may 2013 MDB10SS 1 a, microdip, single-phase bridge rectifiers features ? low package profile: 1.45 mm (max) ? requires only 35 mm 2 of board space ? high surge current capability: 30 a (max) ? glass passivated ju nction rectifiers ? smaller plastic body vs mdb10s ? green compound ? ul certification: e352360 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. notes: 1. 60 hz sine wave, r-load, t a = 25c on fr-4 pcb. 2. 60 hz sine wave, non-repe titive 1 cycle peak value, t j = 25c. thermal characteristics (3) note: 3. device mounted on fr-4 pcb with board size = 76.2 mm x 114.3 mm (jesd51-3 standards) symbol parameter value units v rrm maximum repetitive peak reverse voltage 1000 v v rms maximum rms voltage 700 v v dc maximum dc blocking voltage 1000 v i f(av) average rectified forward current (1) 1.0 a i fsm peak forward surge current (2) 30 a i 2 t i 2 t rating for fusing (t<8.3ms) 3.735 a 2 s t j operating junction temperature range -55 to +150 c t stg storage temperature range -55 to +150 c symbol parameter typ. units r ja thermal resistance, junction-ambient measurement with dual dice 250 c/w measurement with single die 150 c/w jl thermal characterization, junction to lead measured at anode pin 57 c/w measured at cathode pin 15 c/w + - micro dip
MDB10SS ? 1 a, microdip, si ngle-phase bridge rectifiers ? 2012 fairchild semiconductor corporation www.fairchildsemi.com MDB10SS rev. 1.1.0 2 electrical characteristics values are at t a = 25c unless otherwise specified . symbol parameter test condition value units v f maximum forward voltage i f = 1 a, pulse measurement, per diode 1.1 v i r maximum reverse current at v rrm , pulse measurement, per diode 10 a c j typical junction capacitance v r = 4 v, f = 1 mhz 10 pf
MDB10SS ? 1 a, microdip, si ngle-phase bridge rectifiers ? 2012 fairchild semiconductor corporation www.fairchildsemi.com MDB10SS rev. 1.1.0 3 typical performan ce characteristics figure 1. forward voltage vs forward current (per diode) figure 2. typical reverse current characteristics (per diode) figure 3. total capacitance 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t a =150 o c t a =125 o c t a =85 o c t a =-55 o c t a =25 o c forward voltage, v f [v] forward current, i f [a] 20 40 60 80 100 120 0.1 1 10 100 1000 t a =150 o c t a =125 o c t a =85 o c t a =25 o c t a =-55 o c reverse current, i r [na] percent of rated peak reverse voltage [%] 01234567 20 30 40 50 60 70 80 90 100 total capacitance, c t [pf] reverse voltage, v r [v] f = 1mhz
MDB10SS ? 1 a, microdip, si ngle-phase bridge rectifiers ? 2012 fairchild semiconductor corporation www.fairchildsemi.com MDB10SS rev. 1.1.0 4 physical dimensions figure 4. 4-lead, micro surface mount (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . 3 , 1 , ' 1 2 7 ( 6 $ 7 + , 6 3 $ & |